kw.\*:("Densité défaut")
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Equipment maintenance focus in defect density improvements IBM microelectronics, burlington, vermontBILODEAU, Matthew P; DELIBAC, W. David.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 22-26, isbn 0-7803-8312-5, 1Vol, 5 p.Conference Paper
Lois d'héritage des défauts et de leurs densités dans les cristaux pour des déformations homogènes grandesSTREL'TSOV, V. A.Fizika tverdogo tela. 1985, Vol 27, Num 12, pp 3713-3715, issn 0367-3294Article
The impact of the nanoscale on computing systemsGOLDSTEIN, Seth Copen.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 655-661, isbn 0-7803-9254-X, 1Vol, 7 p.Conference Paper
Propagation of plane waves of a defect field in a viscoplastic medium in the presence of an interface between two mediaCHERTOVA, N. V; CHERNYAEV, Yu. V.Journal of applied mechanics and technical physics. 2004, Vol 45, Num 1, pp 96-104, issn 0021-8944, 9 p.Article
The emerging picture of ferromagnetism in the divalent hexaboridesFISK, Z; OTT, H. R; BARZYKIN, V et al.Physica. B, Condensed matter. 2002, Vol 312-13, pp 808-810, issn 0921-4526Conference Paper
Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle
Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article
The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article
One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emittersIIDA, D; MIURA, A; OKADOME, Y et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2005-2009, issn 1862-6300, 5 p.Conference Paper
Defect reduction in non-polar (1120) GaN grown on (1 102) sapphireJOHNSTON, Carol F; KAPPERS, Menno J; MORAM, Michelle A et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 6, pp 1190-1193, issn 1862-6300, 4 p.Conference Paper
Mechanisms of etch hillock formationTAN, S.-S; REED, M. L; HAN, H et al.Journal of microelectromechanical systems. 1996, Vol 5, Num 1, pp 66-72, issn 1057-7157Article
Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation EnergiesCANCADO, L. G; JORIO, A; MARTINS FERREIRA, E. H et al.Nano letters (Print). 2011, Vol 11, Num 8, pp 3190-3196, issn 1530-6984, 7 p.Article
The simplest quantum model supporting the kibble-zurek mechanism of topological defect production : Landau-Zener transitions from a new perspectiveDAMSKI, Bogdan.Physical review letters. 2005, Vol 95, Num 3, pp 035701.1-035701.4, issn 0031-9007Article
Influence of distributed defects on the photoelectric characteristics of a large-area deviceSOPORI, B; WEI CHEN.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 375-378, issn 0022-0248Conference Paper
Interdiffusion in chalcogenide alloys with a high density of vacanciesLEUTE, V; STÜKEN, F; WEITZE, D et al.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, pp 1366-1371, issn 0940-483XConference Paper
Interval estimates for yield modelingWINTER, C. L; COOK, W. L.IEEE journal of solid-state circuits. 1986, Vol 21, Num 4, pp 590-591, issn 0018-9200Article
Interstitial and vacancy concentrations in the presence of interstitial injectionHU, S. M.Journal of applied physics. 1985, Vol 57, Num 4, pp 1069-1075, issn 0021-8979Article
Atomistic mechanisms of fatigue in nanocrystalline metalsFARKAS, D; WILLEMANN, M; HYDE, B et al.Physical review letters. 2005, Vol 94, Num 16, pp 165502.1-165502.4, issn 0031-9007Article
Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasmaNIIKURA, Chisato; KONDO, Michio; MATSUDA, Akihisa et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 42-46, issn 0022-3093, 5 p.Conference Paper
Percolation study of defect tolerance in missing-crossbar networksZWOLAK, Michael P; ZALLEN, Richard; DI VENTRA, Massimiliano et al.Solid state communications. 2002, Vol 124, Num 5-6, pp 167-170, issn 0038-1098, 4 p.Article
Use of a CMOS static memory array as a technology test vehicleSCHMITT-LANDSIEDEL, D; WINNERL, J; NEUENDORF, G et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 219-223, issn 0748-8017Article
Etude du frottement interne de l'antimoniure d'indium contenant des densités variables de défautsMAKSIMYUK, P.A; FOMIN, A.V; GLEJ, V.A et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 292-294, issn 0367-3294Article
On a connection between vacancy formation parameters and melting process in rare gas solidsLAZARIDOU, M; EFTAXIAS, K.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp K147-K149, issn 0031-8965Article
Etude de la perfection cristalline des cristaux avec une distribution de défautsVORONKOV, S. N; CHUKHOVSKIJ, F. N; PISKUNOV, D. I et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1911-1912, issn 0367-3294Article
60 Seconds Puddle time-a tradition to overcome in CA resists : Process optimization and defect eliminationSHALOM, Eitan; ZEID, Shaike.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69233W.1-69233W.10, issn 0277-786X, isbn 978-0-8194-7108-6Conference Paper